Qualcomm announced the Snapdragon 845 SoC in early December 2017. And while we’re yet to see a smartphone powered by the latest chipset, details about Qualcomm’s next-gen Snapdragon 855 SoC have surfaced online. If the leak is to be believed, the Snapdragon 855 SoC will be the first ever 7-nanometer chip to be mass produced.
Details were shared via a tweet from ‘respected leaker’ Roland Quandt, who is well known for sharing insider scoops on upcoming devices. He tweeted saying, “Qualcomm won’t say it, but their contractors do. Snapdragon 855 (SDM855) is the first 7nm SoC. (probably the one the X24 modem ends up in).” If indeed this turns out to be true, the new chip will not only perform faster, but also offer better energy efficiency.
Qualcomm has been building its high-end chipsets with Samsung’s foundry business for a few years now, but the new 7nm chipsets are likely to be manufactured by Taiwan’s TSMC. If early reports are to go by, TSMC has also started building the ‘world’s first’ semiconductor plant to support creation of 3nm node silicon chips.
The existing Snapdragon 845 SoC powered smartphones are expected to arrive later this month with the debut of Samsung Galaxy S9 and Galaxy S9+ at MWC 2018. Other smartphones such as the Xiaomi Mi MIX 2s, Sony Xperia XZ2, LG V30 and OnePlus 6 among others are also expected to be powered by the same chipset. It is more likely that the Galaxy S10 (or Galaxy X) that will be released next year could be powered by the Snapdragon 855 SoC.
Snapdragon 845 SoC is built on 10nm FinFET process with Kryo CPU architecture – four performance cores (Cortex A75) and four efficiency cores (Cortex A55). It is paired with Adreno 630 GPU and X20 LTE modem.