Qualcomm had first announced Snapdragon 835 processor back in November 2016 with a handful of details about its features. Weeks later, Qualcomm teased the new chipset, saying that more details about the processor will be revealed at the CES 2017. The latest chipset is expected to bring a massive improvement over the existing Qualcomm s flagship processors. While Qualcomm had been trying to keep the details under the wraps so far, a new leak gives us exhaustive data about the new chipset. Also Read - Google gives another reason to consider Snapdragon-based Android devicesAlso Read - Snapdragon 778G launches for premium Android smartphones with support for 144Hz display
Posted on Weibo, the latest leak by VideoCardz comes in the form of slides, corroborating previous rumors that the latest Qualcomm chipset will indeed be a massive upgrade. According to the leak, the chipset comes with Snapdragon X16 LTE Modem and will sport Kyro 280 CPU, along with Adreno 540 GPU. The Kyro 280 cores of the chipset will be able to offer up to 20 percent performance uplift over a range of use cases such as app load, web browsing and use of Virtual Reality devices or apps. Also Read - This Qualcomm chip bug affects around 30 percent of phones globally: Report
The graphic process supports about 60 times as many colors as the most recent Snapdragon chipsets, with 25 percent faster rendering. Also, with the Qualcomm Spectra Camera ISP in the chipset, the cameras of smartphones powered by Snapdragon 835 will come with smoother zoom and faster auto focus.
And in terms of videos, the chipset will offer support for 10-bit, 4K, 60fps video playback with OpenGL ES, Vulkan, and DirectX 12 graphics. In addition to that, the chipset comes with Qualcomm Haven security, which will make Snapdragon 835 the first to support full biometric suite.
At the time of announcement itself, we knew, that the Snapdragon 835 will be powering next generation of premium and flagship smartphones. The SoC has been manufactured by Samsung and is based on the newest 10nm FinFET process. From what Qualcomm believes, the new fabrication process makes the chipset up to 30 percent more efficient while offering performance improvement of 27 percent. The process will also allow it to consume 40 percent less power compared to the existing chipsets. At the same time, the reduced footprint will also allow hardware manufacturers to make smaller components. ALSO READ: Qualcomm Snapdragon 653, Snapdragon 626 and Snapdragon 427 bring dual-cameras, faster LTE to affordable smartphones
We also know that the new Snapdragon 835 SoC brings with it Quick Charge 4.0, which Qualcomm claims is up to 20 percent faster than the previous version. The current Snapdragon 820 and 821 SoC s include Quick Charge 3.0 feature that can charge the smartphone battery up to 80 percent in 35 minutes.
Quick Charge 4.0 also brings the third generation Intelligent Negotiation for Optimum Voltage (INOV) for real-time thermal management. Essentially, the INOV is capable of detecting the quality and type of charging cable you are using, so that it can ensure the charger offers adequate power to the battery while ensuring it doesn t overload the circuits, hence being able to avoid smartphone explosions while charging. Besides this, Qualcomm is also bringing two new ICs the SMB1381 and the SMB1380. These ICs can offer peak efficiency of up to 95 percent along with low impedance and advanced fast charging features like battery differential sensing. The chipset also supports USB-C and USB Power Delivery standards, which Google had announced in the Android 7.0 Nougat documentation for unified charging across devices.