Qualcomm s latest Snapdragon 835 processor, launched earlier this year, will be powering some of the hottest smartphones lined up for a near launch. Expected to be powering the likes of Samsung Galaxy S8, Nokia 8, and the Xiaomi Mi 6; the processor is claimed to offer 27 percent increase in performance with 40 percent less power usage as compared to the older Snapdragon 820. While it is claimed to be the most advanced chipset till date by Qualcomm, the processor was put through an early benchmarking test and the results are unsurprising. Also Read - Google gives another reason to consider Snapdragon-based Android devicesAlso Read - Snapdragon 778G launches for premium Android smartphones with support for 144Hz display
Built using the new 10nm fabrication process, the new chipset is the first commercially-available 10nm SoC and is yet to be seen powering commercial devices, however, Android Police got the opportunity to conduct an early benchmark test on the processor at Qualcomm headquarters and what has been uncovered is a mixed bag. The first major revelation is that for the Snapdragon 835 chipset, Qualcomm has ditched Kryo architecture for something that is built on ARM Cortex Technology. Although the company is still calling it the Kryo 280 , as Ars Technica points out, it is, in fact, a reversion to an ARM design in part. The new kind of license allows more tailoring than previously possible. Also Read - This Qualcomm chip bug affects around 30 percent of phones globally: Report
When compared with the predecessors, the Snapdragon 835 SoC delivered substantially higher results while in some facets, it also underperformed, especially related to image-processing. However, the overall performance of the chipset is couple of notches better.
On Geekbench 4.0, the chipset outperformed the older Snapdragon 821. Tested alongside the OnePlus 3T with Snapdragon 821 and Android 7.0 Nougat, and Google Pixel XL running Android 7.1.1 Nougat, the Qualcomm smartphone reference running the newest chipset scored significantly high in CPU performance, obtaining a nearly 40 percent higher score in the multicore test. On the AnTuTu scale, the processor moved past the 181000 mark, while in the 3D Mark test, the chipset scored nearly 50 percent higher than the Pixel XL and OnePlus 3T, thanks to the use of Adreno 540.
It is worth mentioning that the benchmarks were conducted on hardware by Qualcomm as a reference platform running Android 7.1.1 Nougat. Hence, it is possible that the real-world performance of the chipset varies from the controlled test results. ALSO READ: Samsung Galaxy S8 tops with over 205,000 points on AnTuTu benchmark
Interestingly, the upcomingSamsung Galaxy S8 which is believed to be the first smartphone to be powered by the newest chipset was revealed in a new video highlighting its AnTuTu benchmark scores. According to the video, the Galaxy S8 scored an astounding 205284 points on the AnTuTu benchmark score which surpasses the results of the Apple iPhone 7 that managed to achieve 181807 points. At this high a score, the Galaxy S8 is not only ahead of the latest iPhone, but around 40,000 points ahead of the OnePlus 3T smartphone which is known for its high performance score of 162423 points. With the early benchmark conducted on the processor, it but makes for a plausible clause that the upcoming smartphones powered by the Snapdragon 835 SoC promise to be the most performance-centric ones till date.