Taking smartphone storage solution to an entirely new level, Samsung Electronics announced that it has begun mass production of the first 512GB memory chip for next-generation mobile devices. Also Read - Bad news for Galaxy S21 FE fans: Samsung may only launch it in select marketsAlso Read - Galaxy Z Flip 3, Galaxy Z Fold 3 official teasers from Samsung leak
Utilising Samsung’s latest 64-layer, 512-GB V-NAND chips, the new 512GB Universal Flash Storage (eUFS) memory chip provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets, the company said in a statement. Also Read - Samsung Galaxy M32 in pics: First look at the Redmi Note 10S competitor
“The new Samsung 512GB eUFS provides the best-embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro-SD cards,” said Jaesoo Han, Executive Vice President of Memory Sales and Marketing at Samsung Electronics.
“By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world,” Jaesoo added. The increased storage capacity will provide a much more extensive mobile experience.
“For example, the new high-capacity storage enables a flagship smartphone to store approximately 130 4K Ultra HD video clips of a 10-minute duration — which is about a tenfold increase over a 64GB chip which allows storing only about 13 of the same-sized video clips,” Samsung said. The Samsung 512GB chip also features strong read and write performance.
With this, mobile users can enjoy seamless multimedia experiences such as high-resolution burst shooting, as well as file searching and video downloading in dual-app viewing mode. Samsung also announced to steadily increase an aggressive production volume for its 64-layer 512GB chips in addition to expanding its 256GB chips production.